IXFR102N30P Datasheet Polar HiPerFET Power MOSFET

Manufacturer: IXYS (now Littelfuse)

IXFR102N30P polar hiperfet power mosfet by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXFR102N30P
Manufacturer	IXYS (now Littelfuse)
File Size	110.63 KB
Description	Polar HiPerFET Power MOSFET
Download	IXFR102N30P Download (PDF)

Overview

Advanced Technical Information www.DataSheet4U.com PolarHTTM HiPerFET IXFR 102N30P Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode VDSS ID25 RDS(on) trr = = = ≤ 300 V 60 A 36 mΩ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 60 250 60 60 2.5 10 300 -55 ...

+150 150 -55 ...

Key Features

z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in. ) from case for 10 s 50/60 Hz, RMS, 1 minute Mounting force 300 2500 22..130/5..29 5 Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Ch.

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