IXFR14N100Q2 Datasheet | IXYS

Advanced Technical Data HiPerFET Power MOSFETs Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS, t = 1 min ISOL = 1mA, t = 1 s Mounting Force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 9.5 56 14 50 2.5 20 200 -55 ... +150 150 -55 ... +150 300 2500 3000 V V...