IXFR14N100Q2 Overview
Advanced Technical Data HiPerFET Power MOSFETs TM IXFR14N100Q2 Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr z z z VDSS = = ID25 RDS(on) = .. 1000 V 9.5 A 1.0 Ω trr ≤ 300 ns ISOPLUS247 (IXFR) E153432 G G = Gate E = Source C E ISOLATED TAB C = Drain Features z z Double metal process for low gate resistance Epoxy meet UL 94 V-0, flammability classification Low RDS (on), low Qg Avalanche energy and current rated Fast intrinsic rectifier Applications z z 20..120 / 4.6..27 N/lb 5 g