IXFR102N30P
IXFR102N30P is Polar HiPerFET Power MOSFET manufactured by IXYS.
Advanced Technical Information
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PolarHTTM HiPerFET IXFR 102N30P Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode
VDSS ID25
RDS(on) trr
= = = ≤
300 V 60 A 36 mΩ 200 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
Maximum Ratings 300 300 ± 20 ± 30 60 250 60 60 2.5 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ N/lb g z
ISOPLUS247 (IXFR)...
