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HiPerFETTM Power MOSFETs IXFR 14N80 IsoPlus247TM (Electrically Isolated Tab)
N-Channel Enhancement Mode High dv/dt, Low t , HDMOSTM Family
rr
V = 800 DSS
ID25 = 14 =RDS(on) 0.7
V
A Ω
trr ≤ 250 ns
Symbol VDSS VDGR VGS V
GSM
ID25 IDM IAR EAR dv/dt
PD T
J
TJM T
stg
TL VISOL Weight
Symbol
VDSS V
GS(th)
IGSS IDSS
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t = 1minute leads-to-tab
Maximum Ratings
800 V 800 V ±20 V ±30 V
14 A 56 A 14 A
45 mJ 5 V/ns
ISOPLUS 247
Isolated mounting tab*
G = Gate S = Source
D = Drain
* Patent pending
250 -55 ...
IXFR14N80 Datasheet
