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IXFR140N20P - PolarHT HiPerFET Power MOSFET

Key Features

  • z z z z z International standard isolated package UL recognized package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z Characteristic Values Min. Typ. Max. 200 2.5 5.0 ± 200 25 250 22 V V nA μA μA mΩ mΩ z Easy to mount Space savings High power density VGS = 10 V, ID = 70 A VGS = 15 V, ID = 140A Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved DS99298D(11/05) IXFR 140N20P Sym.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information PolarHTTM HiPerFET IXFR 140N20P Power MOSFET ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated; Fast Intrinsic Diode Symbol VDSS VDGR VGS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ± 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C 17 1.6 mm (0.062 in.