IXFR140N20P Overview
Advance Technical Information PolarHTTM HiPerFET IXFR 140N20P Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated; Fast Intrinsic Diode G VDSS = 200 V ID25 = 75 A RDS(on) = 22 mΩ ≤ 150 ns trr .. ISOPLUS247 (IXFR) E153432 D S ISOLATED TAB G = Gate S = Source D = Drain Features z z z z z International standard isolated package UL recognized package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the des
IXFR140N20P Key Features
- easy to drive and to protect Fast intrinsic diode