The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Advanced Technical Information
HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Backside)
Single MOSFET Die
IXFR 150N15
V = 150 V DSS
ID25 = 105 A RDS(on) = 12.5 mW
trr £ 250 ns
Symbol
VDSS VDGR VGS VGSM ID25 ID(RMS) I
DM
IAR E
AR
EAS dv/dt
PD TJ TJM Tstg TL VISOL Weight
Symbol
VDSS VGS(th) IGSS
I
DSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
Continuous Transient
TC = 25°C (MOSFET chip capability) External lead (current limit)
T C
= 25°C, Note 1
TC = 25°C
T C
= 25°C
TC = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V DD
£
V DSS
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min
Maximum Ratings
150 V 150 V
±20 V ±30 V
105 A 76 A
600 A 150 A
60 mJ 3J
5 V/ns
400 -55 ... +150
150 -55 ...
IXFR150N15 Datasheet
