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IXFT180N20X3HV - Power MOSFET

Key Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information X3-Class HiPerFETTM Power MOSFET IXFT180N20X3HV IXFH180N20X3 VDSS = ID25 =  RDS(on) 200V 180A 7.5m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT..HV) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268HV TO-247 Maximum Ratings 200 V 200 V 20 V 30 V 180 A 160 A 320 A 90 A 2.2 J 20 V/ns 735 W -55 ... +150 C 150 C -55 ...