* z Low Package Inductance z Fast Intrinsic Rectifier z Low RDS(on) and QG Advantages z High Power Density z Easy to Mount z Space Savings © 2011 IXYS CORPORATION, All Rights Reserved DS99364F(07/11) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5
IXFT36N50P Datasheet (212.82 KB)
IXFT36N50P
IXYS
212.82 KB
N-channel power mosfet.
PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFV36N50PS IXFV36N50P IXFH36N50P IXFT36N50P VDSS =.
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