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IXFT36N60P - Power MOSFET

Download the IXFT36N60P datasheet PDF. This datasheet also covers the IXFH36N60P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • D = Drain Tab = Drain Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±200 100 1000 190 V V nA µA µA mΩ z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density © 2005 IXYS All rights reserved IXFH 36N60P Symbol Test Conditions Characteristic Values (TJ = 2.

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Note: The manufacturer provides a single datasheet file (IXFH36N60P_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXFT36N60P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFT36N60P. For precise diagrams, and layout, please refer to the original PDF.

Advance Technical Information www.DataSheet4U.com PolarHV HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet TM ...

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t Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet TM IXFH 36N60P IXFT 36N60P IXFK 36N60P VDSS ID25 RDS(on) t rr = 600 V = 36 A ≤ 190 mΩ ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 36 80 36 50 1.5 20 650 -55 ... +150 150 -55 ...

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