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PolarTM HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFV36N50PS IXFV36N50P IXFH36N50P IXFT36N50P
VDSS =
ID25 =
≤ RDS(on)
trr
≤
500V 36A 170mΩ 200ns
PLUS220SMD (IXFV...S)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md FC
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220) PLUS220 TO-268 TO-247
Maximum Ratings
500
V
500
V
±30
V
±40
V
36
A
90
A
36
A
1.5
J
10
V/ns
540
W
-55 ... +150 150
-55 ... +150
300 260
1.13/10 20..120 /4.5..27
4.
IXFT36N50P Datasheet
