IXFX160N30T - GigaMOS Power MOSFET

Product Overview

IXYS

Part number	IXFX160N30T
Manufacturer	IXYS
File Size	161.99 KB
Description	GigaMOS Power MOSFET
Datasheet	IXFX160N30T Datasheet
Additional preview pages of the IXFX160N30T datasheet.

z z z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ± 200 V V nA z z Easy to Mount Space Savings High Power Density.

📁 Similar Datasheet

Other Datasheets by IXYS

Published: Jul 5, 2010 |