IXFX16N90
IXFX16N90 is HiPerFET Power MOSFETs manufactured by IXYS.
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Hi Per FETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
Preliminary data
Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
IXFH16N90 IXFX16N90
VDSS = 900 V ID25 = 16 A RDS(on) = 0.65 W trr £ 200 ns
Maximum Ratings 900 900 ± 20 ± 30 16 64 16 45 5 360 -55 ... +150 150 -55 ... +150 300 1.13/10 6 V V V V A A A m J V/ns W °C °C °C °C Nm/lb.in. g
TO-247 AD (IXFH)
(TAB)
PLUS 247TM (IXFX)
C (TAB) D
Features l l l l l l
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance
- easy to drive and to protect Fast intrinsic Rectifier
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 2.0 4.5 ±100 TJ = 25°C TJ = 125°C 25 250 0.65 V V n A µA µA Ω l l l
VDSS VGS(th) I GSS I DSS RDS(on)
VGS = 0 V, ID = 250µA VDS = VGS, ID = 5 m A VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V l l l
DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls
Advantages l
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % l l
Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) or mounting clip or spring (PLUS 247TM) Space savings High power density
© 1998 IXYS All rights reserved
97547(2/98)
IXFH.. 16N90 IXFX 16N90
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 6 10 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 430 150 27 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG...