IXFX160N30T
IXFX160N30T is GigaMOS Power MOSFET manufactured by IXYS.
Advance Technical Information
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Giga MOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK160N30T IXFX160N30T
RDS(on) ≤ ≤ trr
TO-264 (IXFK)
VDSS ID25
= =
300V 160A 19mΩ 200ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS d V/dt PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 300 300 ± 20 ± 30 160 440 40 3 20 1390 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. N/lb. g g
G = Gate S = Source (TAB) D = Drain TAB = Drain
(TAB)
PLUS247 (IXFX)
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247)
300 260 1.13/10 20..120 /4.5..27 10 6
Features z z z z z
International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on)
Advantages z
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3m A VDS = VGS, ID = 8m A VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 125°C
Characteristic Values Min. Typ. Max. 300 2.5 5.0 ± 200 V V n A z z
Easy to Mount Space Savings High Power Density
Applications z z z
50 µA 3 m A 19 mΩ z z z z
DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications
© 2009 IXYS CORPORATION, All rights reserved
DS100127(03/09)
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