IXFX320N17T2 Datasheet GigaMOS TrenchT2 HiperFET Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Download the IXFX320N17T2 datasheet PDF. This datasheet also includes the IXFK320N17T2 variant, as both parts are published together in a single manufacturer document.

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IXFX320N17T2 gigamos trencht2 hiperfet power mosfet by IXYS (now Littelfuse) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IXFK320N17T2_IXYS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IXFX320N17T2
Manufacturer	IXYS (now Littelfuse)
File Size	209.52 KB
Description	GigaMOS TrenchT2 HiperFET Power MOSFET
Datasheet	IXFX320N17T2 Datasheet

Overview

Advance Technical Information www.DataSheet4U.com GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK320N17T2 IXFX320N17T2 RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 170V 320A 5.2mΩ 150ns Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C Maximum Ratings 170 170 ± 20 ± 30 320 160 800 100 5 1670 20 -55 ...

+175 175 -55 ...

+175 V V V V A A A A J W V/ns °C °C °C °C °C Nm/lb.in.

Key Features

z z z z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A,.

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