IXGQ28N120B
IXGQ28N120B is High Voltage IGBT manufactured by IXYS.
High Voltage IGBT with Diode
IXGQ 28N120B IXGQ 28N120BD1
V CES
IC25 VCE(sat) tfi(typ)
= 1200 V = 50 A = 3.5 V = 160 ns
Symbol
Test Conditions
VCES VCGR
V GES
VGEM
IC25 IC110 ICM
SSOA (RBSOA)
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient
TC = 25°C TC = 110°C TC = 25°C, 1 ms
V GE
=
V,
=
125°C,
=
Ω
Clamped inductive load
PC TC = 25°C
TJ TJM Tstg
M Mounting torque d
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Weight
D1 Maximum Ratings
1200 1200
±20 V ±30...
