* z International standard package z IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers z MOS Gate turn-on - drive simplicity z Fast Recovery Expitaxial Diode (FRED) - soft recovery with low I RM Symbol VGE(th) ICES IGES VCE(sat) Test Conditions Characteristi
IXGQ28N120B Datasheet (506.16 KB)
IXGQ28N120B
IXYS
506.16 KB
High voltage igbt.
High Voltage IGBT with Diode IXGQ 28N120B IXGQ 28N120BD1 V CES IC25 VCE(sat) tfi(typ) = 1200 V = 50 A = 3.5 V = 160 ns Symbol Test Conditions VCE.
📁 Related Datasheet
IXGQ28N120BD1 High Voltage IGBT (IXYS)
IXGQ20N120B High Voltage IGBT (IXYS Corporation)
IXGQ20N120BD1 High Voltage IGBT (IXYS Corporation)
IXGQ240N30PB High Speed IGBT (IXYS)
IXGQ150N33TC IGBT (IXYS)
IXGQ150N33TCD1 IGBT (IXYS)
IXGQ85N33PCD1 High Speed IGBT (IXYS)
IXGQ90N27PB IGBT (IXYS)
IXGQ90N33TC IGBTs (IXYS Corporation)
IXGQ90N33TCD1 IGBTs (IXYS Corporation)
