* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 2500V~ Electrical Isolation
* Anti-Parallel Sonic Diode
* International Standard Package Advantages
* High Power Density
* Low Gate Drive Requirement Applications
* Capacitor Discharge
IXGR16N170AH1 Datasheet (294.58 KB)
IXGR16N170AH1
IXYS
294.58 KB
High voltage igbt.
High Voltage IGBT w/ Sonic Diode (Electrically Isolated Tab) IXGR16N170AH1 VCES IC90 VCE(sat) tfi(typ) = 1700V = 8A £ 5.0V = 35ns Symbol VCES VCG.
📁 Related Datasheet
IXGR120N60B IGBT (IXYS)
IXGR120N60C2 IGBT (IXYS)
IXGR24N120C3D1 High speed PT IGBT (IXYS)
IXGR24N60C IGBT (IXYS Corporation)
IXGR32N170AH1 High Voltage IGBT (IXYS)
IXGR32N170H1 High Voltage IGBT (IXYS)
IXGR32N60CD1 HiPerFAST IGBT (IXYS Corporation)
IXGR32N90B2D1 IGBT (IXYS)
IXGR35N120B (IXGR35N120B/C) HiPerFAST IGBT ISOPLUS247 (IXYS Corporation)
IXGR35N120C (IXGR35N120B/C) HiPerFAST IGBT ISOPLUS247 (IXYS Corporation)
