IXGR60N60C3C1 Datasheet GenX3 600V IGBT

Manufacturer: IXYS (now Littelfuse)

IXGR60N60C3C1 genx3 600v igbt by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXGR60N60C3C1
Manufacturer	IXYS (now Littelfuse)
File Size	218.43 KB
Description	GenX3 600V IGBT
Datasheet	IXGR60N60C3C1 Datasheet

Overview

www.DataSheet4U.com GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode (Electrically Isolated Back Surface) IXGR60N60C3C1 VCES IC110 VCE(sat) tfi(typ) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS247TM Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL FC TL TSOLD Weight 50/60 Hz, RMS, t = 1minute IISOL < 1mA t = 10 s Mounting Force Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by leads) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 30 13 260 40 400 ICM = 125 @ VCE ≤ VCES 170 -55 ...

+150 150 -55 ...

+150 2500 3000 20..120/4.5..

Key Features

z Silicon Chip on Direct-Copper Bond (DCB) Substrate Optimized for Low Switching Losses Square RBSOA Isolated Mounting Surface Anti-Parallel Ultra Fast Diode High Speed Silicon Carbide Schottky Co-Pack Diode - No Reverse Recovery 2500V Electrical Isolation Avalanche Rated Advantages z z High Power Density Low Gate Drive Requirement.

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