Datasheet Specifications
- Part number
- IXGR72N60A3
- Manufacturer
- IXYS
- File Size
- 203.71 KB
- Datasheet
- IXGR72N60A3_IXYS.pdf
- Description
- IGBT
Description
GenX3TM 600V IGBT Ultra-low Vsat PT IGBTs for up to 5kHz switching IXGR72N60A3 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 52A 1.35V 250ns Symbol V.
Features
* z Mounting Force 1.6mm (0.063 in. ) from case for 10s Plastic body for 10s 50/60 Hz, RMS IISOL ≤ 1mA 20..120/4.5..27 300 260 t = 1min 2500 t = 1s 3000 5 Silocon chip on Direct-Copper Bond (DCB) substrate Isolated mounting surface 2500V electrical isolation Advantages z z High power density Low gApplications
* z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE VCE = VCES VGE = 0V VCE = 0V, VGE = ± 20V IC = 60A, VGE = 15V, Note TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 75 750 ± 100 1.35 V V μA μAIXGR72N60A3 Distributors
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