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IXSH10N60B2D1 - High-Speed IGBT

Download the IXSH10N60B2D1 datasheet PDF. This datasheet also covers the IXSQ10N60B2D1 variant, as both devices belong to the same high-speed igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International standard package.
  • Guaranteed Short Circuit SOA capability.
  • Low VCE(sat) - for low on-state conduction losses.
  • High current handling capability.
  • MOS Gate turn-on - drive simplicity.
  • Fast fall time for switching speeds up to 20 kHz.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXSQ10N60B2D1_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXSH15N120B High-Voltage IGBT
IXSH16N60U1 IGBT
IXSH20N60 High Speed IGBT
IXSH20N60A High Speed IGBT
IXSH20N60B2D1 High Speed IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 10N60B2D1 IXSQ 10N60B2D1 VCES = 600 V I C25 = 20 A V CE(sat) = 2.5 V D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Mounting torque TO-247 TO-3P TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82Ω Clamped inductive load, VGE = 20 V VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 150 Ω, non repetitive TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C Maximum Ratings 600 600 ± 20 ± 30 20 10 11 30 ICM = 20 @ 0.8 VCES 10 100 -55 ... +150 150 -55 ...