Datasheet4U Logo Datasheet4U.com

IXSQ10N60B2D1 - High Speed IGBT with Diode

Key Features

  • International standard package.
  • Guaranteed Short Circuit SOA capability.
  • Low VCE(sat) - for low on-state conduction losses.
  • High current handling capability.
  • MOS Gate turn-on - drive simplicity.
  • Fast fall time for switching speeds up to 20 kHz.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXSA10N60B2D1 High Speed IGBT IXYS Corporation
IXSA15N120B High Voltage IGBT IXYS Corporation
IXSA16N60 Short Circuit SOA Capability IXYS Corporation
IXSA20N60B2D1 High Speed IGBT IXYS Corporation
IXSH15N120A IGBT IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXSH10N60B2D1 High-Speed IGBT
IXSH15N120B High-Voltage IGBT
IXSH16N60U1 IGBT
IXSH20N60 High Speed IGBT
IXSH20N60A High Speed IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 10N60B2D1 IXSQ 10N60B2D1 VCES = 600 V I C25 = 20 A V CE(sat) = 2.5 V D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Mounting torque TO-247 TO-3P TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82Ω Clamped inductive load, VGE = 20 V VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 150 Ω, non repetitive TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C Maximum Ratings 600 600 ± 20 ± 30 20 10 11 30 ICM = 20 @ 0.8 VCES 10 100 -55 ... +150 150 -55 ...