Datasheet4U Logo Datasheet4U.com

IXTH1N300P3HV - High Voltage Power MOSFET

Download the IXTH1N300P3HV datasheet PDF. This datasheet also covers the IXTT1N300P3HV variant, as both devices belong to the same high voltage power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Blocking Voltage.
  • High Voltage Packages Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTT1N300P3HV-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTH1N100 N-Channel MOSFET INCHANGE
IXTH1N100 High-Voltage MOSFET IXYS Corporation
IXTH102N15T N-Channel MOSFET INCHANGE
IXTH102N20T N-Channel MOSFET INCHANGE
IXTH10N100 MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTH1N170DHV N-Channel MOSFET
IXTH1N200P3 High Voltage Power MOSFET
IXTH1N200P3HV High Voltage Power MOSFET
IXTH1N250 High Voltage Power MOSFET
IXTH1N450HV High Voltage Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Voltage Power MOSFET Preliminary Technical Information IXTT1N300P3HV IXTH1N300P3HV VDSS I D25 RDS(on) = 3000V = 1.00A  50 N-Channel Enhancement Mode TO-268HV (IXTT) Symbol VDSS VDGR VGSS VGSM ID25 ID110 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 110C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268HV TO-247HV Maximum Ratings 3000 V 3000 V 20 V 30 V 1.00 A 0.65 A 2.60 A 195 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 1.13/10 Nm/lb.in 4.0 g 6.
Published: |