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IXTH1N300P3HV, IXTT1N300P3HV - High Voltage Power MOSFET

IXTH1N300P3HV Description

High Voltage Power MOSFET Preliminary Technical Information IXTT1N300P3HV IXTH1N300P3HV VDSS I D25 RDS(on) = 3000V = 1.00A  50 N-Channel Enhan.

IXTH1N300P3HV Features

* High Blocking Voltage
* High Voltage Packages Advantages
* Easy to Mount
* Space Savings

IXTH1N300P3HV Applications

* High Voltage Power Supplies
* Capacitor Discharge Applications
* Pulse Circuits
* Laser and X-Ray Generation Systems © 2014 IXYS CORPORATION, All Rights Reserved DS100590A(6/14) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 50V, ID = 0.5A, Note 1

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This datasheet PDF includes multiple part numbers: IXTH1N300P3HV, IXTT1N300P3HV. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXTH1N300P3HV, IXTT1N300P3HV
Manufacturer
IXYS
File Size
216.10 KB
Datasheet
IXTT1N300P3HV-IXYS.pdf
Description
High Voltage Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTH1N300P3HV, IXTT1N300P3HV.
Please refer to the document for exact specifications by model.

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High Voltage Power MOSFET IXYS
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