Download the IXTT26N60P datasheet PDF.
This datasheet also covers the IXTV26N60PS variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
z Fast Recovery diode z Unclamped Inductive Switching (UIS)
rated z International standard packages z Low package inductance
- easy to drive and to protect
Advantages z Easy to mount z Space savings z High power density
DS99376E(12/06)
IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS
Symbol
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max. VDS = 20 V; ID = 0.5 ID25, pulse t.
Full PDF Text Transcription for IXTT26N60P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTT26N60P. For precise diagrams, and layout, please refer to the original PDF.
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS VDSS = 600 V ID25 = 26 A RDS(on) ≤ 270 mΩ TO-247...
View more extracted text
XTV26N60P IXTV26N60PS VDSS = 600 V ID25 = 26 A RDS(on) ≤ 270 mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 5 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P&TO-247) Mounting force (PLUS220) TO-3P TO-247 TO-268 PLUS220 & PLUS220SMD Maximum Ratings 600 V 600 V ±30 V ±40 V 26 A 65 A 13 A 40 mJ 1.2 J 10
IXTT26N60P Datasheet
