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IXTT24P20 - Standard Power MOSFET

Download the IXTT24P20 datasheet PDF. This datasheet also covers the IXTH24P20 variant, as both devices belong to the same standard power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International standard packages.
  • Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH24P20-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTT28N50Q Power MOSFET International Rectifier
IXTT100N25P N-Channel MOSFET IXYS Corporation
IXTT10P50 P-Channel MOSFET IXYS Corporation
IXTT110N10P N-Channel MOSFET IXYS Corporation
IXTT11P50 P-Channel MOSFET IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTT240N15X4HV Power MOSFET
IXTT20N50D High Voltage MOSFET
IXTT20P50P Power MOSFET
IXTT26N50P Power MOSFET
IXTT26N60P N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 24P20 IXTT 24P20 VDSS = - 200 V ID25 = - 24 A ≤RDS(on) 0.15 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic Body for 10s Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings -200 -200 V V ±20 V ±30 V -24 A -96 A -24 A 30 mJ 300 W -55 ... +150 150 -55 ... +150 °C °C °C 400 °C 250 °C 1.13/10 Nm/lb.in. 6g 5g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max.