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IXTT26N60P - N-Channel Power MOSFET

Download the IXTT26N60P datasheet PDF. This datasheet also covers the IXTV26N60PS variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density DS99376E(12/06) IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. VDS = 20 V; ID = 0.5 ID25, pulse t.

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Note: The manufacturer provides a single datasheet file (IXTV26N60PS_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS VDSS = 600 V ID25 = 26 A RDS(on) ≤ 270 mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 5 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P&TO-247) Mounting force (PLUS220) TO-3P TO-247 TO-268 PLUS220 & PLUS220SMD Maximum Ratings 600 V 600 V ±30 V ±40 V 26 A 65 A 13 A 40 mJ 1.2 J 10 V/ns 460 W -55 ...