Overview: PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS VDSS =
ID25 = ≤ RDS(on) 500 V 26 A 230 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS
dv/dt
PD T
J
TJM Tstg TL TSOLD Md Weight TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuos Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) TO-3P TO-268 PLUS220 & PLUS220SMD 500 V G D 500 V S ±30 V TO-268 (IXTT) ±40 V D (TAB) 26 A 78 A G S 26 A 40 mJ PLUS220 (IXTV) 1.0 J D (TAB) 10 V/ns 400 W G D S D (TAB) -55 ... +150 150
-55 ... +150 °C PLUS220SMD (IXTV_S) °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6 g 5.5 g 5 g G S
G = Gate S = Source D (TAB)
D = Drain TAB = Drain Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 500 V VGS(th) VDS = VGS, ID = 250µA 3.0 5.5 V IGSS VGS = ±30 VDC, VDS = 0 ±100 nA I
DSS V =V DS DSS VGS = 0 V TJ = 125° C 25 µA 250 µA RDS(on) VGS = 10 V, ID = 0.
