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IXTT20P50P - Power MOSFET

Key Features

  • International Standard Packages.
  • Avalanche Rated.
  • Rugged PolarPTM Process.
  • Low Package Inductance.
  • Fast Intrinsic Diode Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT20P50P IXTH20P50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings - 500 V - 500 V 20 V 30 V - 20 A - 60 A - 20 A 2.5 J 10 V/ns 460 W - 55 ... +150 C 150 C - 55 ... +150 C 300 260 1.13 / 10 4 6 °C °C Nm/lb.in.