* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4500V~ Electrical Isolation
* High Voltage Package
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Pow
IXYL40N250CV1 Datasheet (236.05 KB)
IXYL40N250CV1
IXYS
236.05 KB
High voltage igbt.
High Voltage XPTTM IGBT w/ Diode (Electrically Isolated Tab) Advance Technical Information IXYL40N250CV1 VCES = 2500V IC110 = 40A V CE(sat) .
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