IXYN82N120C3H1 Overview
+150 °C 2500 V~ 3000 V~ 1.5/13 Nm/lb.in.
IXYN82N120C3H1 Key Features
- Optimized for Low Switching Losses
- Square RBSOA
- Isolation Voltage 2500V~
- Anti-Parallel Ultra Fast Diode
- High Current Handling Capability
- International Standard Package
- High Power Density
- Low Gate Drive Requirement