* Optimized for Low Switching Losses
* Square RBSOA
* Isolation Voltage 2500V~
* Anti-Parallel Ultra Fast Diode
* Positive Thermal Coefficient of Vce(sat)
* High Current Handling Capability
* International Standard Package Advantages
* High Power Density
* Low Gat
IXYN82N120C3H1 Datasheet (230.39 KB)
IXYN82N120C3H1
IXYS
230.39 KB
High-speed igbt.
1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYN82N120C3H1 VCES = 1200V IC110 = 46A V CE(sat) 3.2V tfi(typ) .
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