IXYN82N120C3H1 igbt equivalent, high-speed igbt.
z z z z z
Ec G
Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter
TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG.
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VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V IC
50 μA 3 mA ±100 2.75 3.50 3.20 nA V V
z z z
= 82A, VGE = 15V,.
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