Overview: 1200V XPTTM Gen 4 IGBT
High Speed IGBT for 20-50kHz Switching IXYX110N120C4 Symbol
V CES
V CGR
VGES V
GEM
IC25 I
LRMS
I
C110
ICM
SSOA (RBSOA)
PC
T J
TJM Tstg
TL TSOLD
FC
Weight Test Conditions Maximum Ratings T = 25°C to 175°C J T J = 25°C to 175°C, R GE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC= 25°C (Chip Capability) Terminal Current Limit T = 110°C
C
TC = 25°C, 1ms
VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load
TC = 25°C 310 A 160 A 110 A 740 A ICM = 220 A 0.8 • V V CES 1360 W -55 ... +175 °C 175 °C -55 ... +175 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s 300 °C 260 °C Mounting Force 20..120 /4.5..27 N/lb 6 g Symbol Test Conditions (T J = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V V GE(th) I = 3mA, V = V C CE GE I V = V , V = 0V CES CE CES GE T J = 150C IGES VCE = 0V, VGE = 20V V CE(sat) I = I , V = 15V, Note 1 C C110 GE T J = 150C Characteristic Values Min. Typ. Max. 1200 V 4.5 6.5 V 25 A 1.5 mA 100 nA 1.90 2.27 2.40 V V VCES = 1200V I = 110A C110 V 2.
