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IXYX100N65B3D1 Datasheet IGBT

Manufacturer: IXYS (now Littelfuse)

Download the IXYX100N65B3D1 datasheet PDF. This datasheet also includes the IXYK100N65B3D1 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXYK100N65B3D1-IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode IXYK100N65B3D1 IXYX100N65B3D1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = VCE(sat)  tfi(typ) = 650V 100A 1.85V 73ns TO-264 (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V ±30 V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 10, Non Repetitive TC = 25°C 225 160 100 67 460 50 600 ICM = 200 @VCE VCES 8 830 -55 ...

+175 175 -55 ...

+175 A A A A A A mJ A μs W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) 300 260 1.13/10 20..120 /4.5..27 °C °C Nm/lb.in N/lb TO-264 PLUS247 10 g 6g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 70A, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min.

Key Features

  • International Standard Packages.
  • Optimized for 10-30kHz Switching.
  • Square RBSOA.
  • Avalanche Rated.
  • Short Circuit Capability.
  • Anti-Parallel Ultra Fast Diode.
  • High Current Handling Capability Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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