IXYX100N65C3D1 - IGBT

This page provides the datasheet information for the IXYX100N65C3D1, a member of the IXYK100N65C3D1 IGBT family.

Features

International Standard Packages.
Optimized for 20-60kHz Switching.
Square RBSOA.
Avalanche Rated.
Short Circuit Capability.
Anti-Parallel Ultra Fast Diode.
High Current Handling Capability Advantages.
High Power Density.
Low Gate Drive Requirement.

IXYS

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Datasheet Details

Part number	IXYX100N65C3D1
Manufacturer	IXYS
File Size	221.62 KB
Description	IGBT
Datasheet	IXYX100N65C3D1 Datasheet
Additional preview pages of the IXYX100N65C3D1 datasheet.

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Full PDF Text Transcription

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Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode IXYK100N65C3D1 IXYX100N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = 650V IC110 = 100A VCE(sat)  2.3V tfi(typ) = 60ns TO-264 (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V ±30 V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 10, Non Repetitive TC = 25°C 200 160 100 67 420 50 600 ICM = 200 @VCE VCES 7 830 -55 ... +175 175 -55 ...

Published: Jul 20, 2016 |