* Isolated Substrate
* high isolation voltage (>2500V)
* excellent thermal transfer
* Increased temperature and power cycling capability
* IXYS advanced Z-MOS process
* Low gate charge and capacitances
* easier to drive
* faster switchi
IXZR16N60 Datasheet (163.91 KB)
IXZR16N60
IXYS
163.91 KB
Z-mos rf power mosfet.
IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET N-ChaNnCnehlaEnnheal EncnehmanecnetmMeondteMSowdietch Mode RF MOSFET Low CLaopwacQitgaanncde RZg-MOSTM.
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