Datasheet Summary
IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET
N-ChaNnCnehlaEnnheal EncnehmanecnetmMeondteMSowdietch Mode RF MOSFET
Low CLaopwacQitgaanncde RZg-MOSTM MOSFET Process OptimHiziegdh fdovr/RdtF Operation
Ideal fNoranColassescoCn,dDS, w&itEchAinpgplications
VDSS ID25
= 600 V = 18 A
Symbol VDSS VDGR
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Maximum Ratings
RDS(on) ≤ 0.56 Ω
=
VGS VGSM
Continuous Transient
±20
±30
= =G 60A60B =
ID25
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
IAR EAR
Tc = 25°C Tc = 25°C
TBD mJ
G S dv/dt
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG...