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IXZR16N60 - Z-MOS RF Power MOSFET

Features

  • Isolated Substrate.
  • high isolation voltage (>2500V).
  • excellent thermal transfer.
  • Increased temperature and power cycling capability.
  • IXYS advanced Z-MOS process.
  • Low gate charge and capacitances.
  • easier to drive.
  • faster switching.
  • Low RDS(on).
  • Very low insertion inductance (.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXZR16N60A Z-MOS RF Power MOSFET
IXZR16N60B Z-MOS RF Power MOSFET
IXZH10N50LA RF Power MOSFET
IXZH10N50LB RF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET N-ChaNnCnehlaEnnheal EncnehmanecnetmMeondteMSowdietch Mode RF MOSFET Low CLaopwacQitgaanncde RZg-MOSTM MOSFET Process OptimHiziegdh fdovr/RdtF Operation Ideal fNoranColassescoCn,dDS, w&itEchAinpgplications VDSS ID25 = 600 V = 18 A Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 600 V 600 V RDS(on) ≤ 0.56 Ω PDC = 350 VGS VGSM Continuous Transient ±20 V ±30 V 60 S DD GS = =G 60A60B = ID25 Tc = 25°C IDM Tc = 25°C, pulse width limited by TJM 18 A 90 A D IAR EAR Tc = 25°C Tc = 25°C 18 A TBD mJ G S dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 5 >200 V/ns V/ns PDC PDHS PDAMB RthJC RthJHS Tc = 25°C, Derate 4.
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