IXZH10N50LB Description
IXZH10N50LA/B RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation in mon Source Mode VDSS ID25 = 500 V = 10 A Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test.
IXZH10N50LB Key Features
- IXYS RF Low Capacitance Z-MOSTM
- Very low insertion inductance (<2nH)
- No beryllium oxide (BeO) or other
- High Performance RF Z-MOSTM
- mon Source RF Package
- As measured under pulsed conditions (5 ms, 5%) with a gated Bias in Class AB, at P1dB