IXZH10N50LA
IXZH10N50LA is RF Power MOSFET manufactured by IXYS.
IXZH10N50LA/B
RF Power MOSFET
N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation in mon Source Mode
VDSS ID25
= 500 V = 10 A
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient
Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0
Maximum Ratings 500 V 500 V ±20 V ±30 V 10 A 60 A 16 A TBD m J 5 V/ns
>200 V/ns
=G A=
150V (operating)
PDC PDHS PDAMB Rth JC Rth JHS
(1) Tc = 25°C, Derate 6.0W/°C above 25°C Tc = 25°C
250 W 180 W
3W 0.60 C/W 0.85 C/W
VDSS VGS(th) IGSS IDSS
RDS(on) gfs TJ TJM Tstg TL Weight
VGS = 0 V, ID = 4 ma
VDS = VGS, ID = 250µΑ
VGS = ±20 VDC, VDS = 0
VDS = 0.8VDSS VGS=0
TJ = 25C TJ =125C min. 500 3.5
VGS = 20 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
VDS = 50 V, ID = 0.5ID25, pulse test
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1.6mm(0.063 in) from case for 10 s typ....
