Datasheet4U Logo Datasheet4U.com

IXZH10N50LA - RF Power MOSFET

Key Features

  • nA.
  • IXYS RF Low Capacitance Z-MOSTM Process µA.
  • Very low insertion inductance (.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXZ-2020 2 Axis MEMS gyroscope InvenSense
IXZ12210N50L RF Power MOSFET IXYS Corporation
IXZ210N50L N-Channel Linear 175MHz RF MOSFET IXYS Corporation
IXZ2210N50L N-Channel Linear 175MHz RF MOSFET IXYS Corporation
IXZ308N120 Z-MOS RF Power MOSFET IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXZH10N50LB RF Power MOSFET
IXZR16N60 Z-MOS RF Power MOSFET
IXZR16N60A Z-MOS RF Power MOSFET
IXZR16N60B Z-MOS RF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IXZH10N50LA/B RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation in Common Source Mode VDSS ID25 = 500 V = 10 A Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 Maximum Ratings 500 V 500 V ±20 V ±30 V 10 A 60 A 16 A TBD mJ 5 V/ns >200 V/ns B D =G A= S SG D 150V (operating) PDC PDHS PDAMB RthJC RthJHS (1) Tc = 25°C, Derate 6.0W/°C above 25°C Tc = 25°C 250 W 180 W 3W 0.60 C/W 0.