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MIXA60WB1200TEH - IGBT

Key Features

  • Easy paralleling due to the positive temperature coefficient of the on-state voltage.
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI.
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
  • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
MIXA60W1200TED XPT IGBT
MIXA60WH1200TEH XPT IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Converter - Brake - Inverter Module XPT IGBT Part name (Marking on product) MIXA60WB1200TEH MIXA60WB1200TEH Three Phase Rectifier Brake Three Phase Chopper Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM = 190 A IC25 = 60 A IC25 = 85 A IFSM = 700 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V 21 22 D11 D13 D15 D7 16 D1 T1 18 D3 T3 20 D5 T5 7 1 23 15 17 6 19 5 4 NTC 8 D12 D14 D16 14 23 24 T7 11 10 D2 T2 12 D4 T4 13 T6 D6 9 E 72873 Pin configuration see outlines. Features: • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.