20N60BD1 Description
+150 V V V V A A A A W °C °C °C °C g g TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C E C = Collector, TAB = Collector C (TAB) G = Gate, E = Emitter,.
20N60BD1 Key Features
- International standard packages
- High frequency IGBT and antiparallel FRED in one package
- High current handling capability
- HiPerFASTTM HDMOSTM process
- MOS Gate turn-on -drive simplicity