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IXYS Corporation

20N60BD1 Datasheet Preview

20N60BD1 Datasheet

IGBT

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HiPerFASTTM IGBT
with Diode
Preliminary data
IXGH 20N60BD1
IXGT 20N60BD1
VCES = 600 V
IC25 = 40 A
V =CE(sat)typ 1.7 V
tfi(typ)
= 100 ns
Symbol
Test Conditions
VCES
VCGR
VGES
V
GEM
IC25
IC90
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 100 mH
P
C
T
C
= 25°C
TJ
TJM
Tstg
Md Mounting torque (M3) TO-247AD
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247AD
TO-268
Maximum Ratings
600 V
600 V
±20 V
±30 V
40 A
20 A
80 A
ICM = 40
@ 0.8 VCES
150
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
300 °C
6g
4g
Symbol
BVCES
VGE(th)
ICES
I
GES
VCE(sat)
Test Conditions
IC = 250 mA, VGE = 0 V
IC = 250 mA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
V
CE
=
0
V,
V
GE
=
±20
V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 150°C
600 V
2.5 5.5 V
200 mA
3 mA
±100 nA
1.7 2.0 V
TO-268
(IXGT)
G
E
TO-247 AD
(IXGH)
C (TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
• International standard packages
• High frequency IGBT and antiparallel
FRED in one package
• High current handling capability
• HiPerFASTTM HDMOSTM process
• MOS Gate turn-on
-drive simplicity
Applications
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• Space savings (two devices in one
package)
• High power density
• Suitable for surface mounting
• Very low switching losses for high
frequency applications
• Easy to mount with 1 screw,TO-247
(insulated mounting screw hole)
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98566A (3/99)
1-2




IXYS Corporation

20N60BD1 Datasheet Preview

20N60BD1 Datasheet

IGBT

No Preview Available !

IXGH 20N60BD1
IXGT 20N60BD1
Symbol
gfs
Cies
C
oes
Cres
Qg
Q
ge
Qgc
t
d(on)
tri
t
d(off)
tfi
E
off
td(on)
t
ri
Eon
t
d(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
9 17
S
V = 25 V, V = 0 V, f = 1 MHz
CE GE
1500
150
40
pF
pF
pF
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE CES
55 nC
12 nC
20 nC
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may increase
for V (Clamp) > 0.8 • V , higher T or
CE
CES
J
increased RG
Inductive load, TJ = 125°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
100
mH
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may increase
for V (Clamp) > 0.8 • V , higher T or
CE
CES
J
increased RG
15 ns
25 ns
110 200 ns
100 150 ns
0.7 1.0 mJ
15 ns
35 ns
0.75 mJ
220 ns
140 ns
1.2 mJ
TO-247
0.83 K/W
0.25 K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VF
IRM
t
rr
RthJC
IF = 30A, VGE = 0 V,
TJ = 150°C
Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C
IF = 30A, VGE = 0 V, -diF/dt = 100 A/ms
V = 100 V
R
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V
T
J
=100°C
TJ = 25°C
6
100
25
1.6 V
2.5 V
A
ns
ns
1.0 K/W
Min. Recommended Footprint
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2


Part Number 20N60BD1
Description IGBT
Maker IXYS Corporation
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20N60BD1 Datasheet PDF






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