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40N120 Key Features

  • IGBT with NPT (non punch through) structure
  • reverse blocking capability
  • function of series diode monolithically integrated, no external series diode required
  • soft reverse recovery
  • positive temperature coefficient of saturation voltage
  • Epoxy of TO-247 package meets UL 94V-0

Other 40N120 Datasheets

Manufacturer Part Number Description
ON Semiconductor Logo onsemi 40N120 IGBT
ON Semiconductor Logo onsemi 40N120FL2 IGBT
ON Semiconductor Logo onsemi 40N120IHL IGBT

View all 40N120 datasheets →

40N120 Description

IGBT with Reverse Blocking capability IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. C TO-247 AD G G C E C (TAB) E G = Gate, C = Collector, E = Emitter, TAB = Collector IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol VCE(sat) VGE(th) I CES IGES QGon Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 0/15 V; TVJ = 125°C RBSOA, Clamped inductive load;.