40N60 Key Features
- for low on-state conduction losses High current handling capability MOS Gate turn-on
- drive simplicity Fast Fall Time for switching speeds up to 20 kHz
- VCES V GE = 0 V V CE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
- Part: 40N60
- Manufacturer: IXYS (official site)
- Size: 128.01 KB
Other 40N60 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
40N60 | IGBT |
Fairchild |
40N60 | 40A Field Stop IGBT |
|
Fairchild |
40N60A4D | HGT1N40N60A4D |
|
onsemi |
40N60FL | IGBT |
STMicroelectronics |
40N60M2 | N-Channel MOSFET |
40N60 Description
+150 Mounting torque G = Gate, E = Emitter, C = Collector, TAB = Collector 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6g 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) min.