| Part Number | 40N60 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
NGTB40N60FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offe.
a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features
* Low Saturation Voltage using Trench with Field Stop Technology * Low Switching Loss Reduces System Power . |