GWM120-0075P3 - Six-Pack MOSFET Modules

IXYS Corporation

Datasheet Details

MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode.
package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. TVJ = 25°C TVJ = 125°C 2 0.1 0.2 91 19 28 36 56 130 50 0.9 90 1.1 1.4 3.7 6.4 4.5 m Ω m.

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Published: Jan 24, 2007 |