GWM120-0075P3 Datasheet | IXYS

Features - MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode - package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. TVJ = 25°C TVJ = 125°C 2 0.1 0.2 91 19 28 36 56 130 50 0.9 90 1.1 1.4 3.7 6.4 4.5 m Ω mΩ 4 1 V µA m A µA n C n C n C ns ns ns ns V ns 0.85 K/W K/W RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF t rr Rth JC Rth JH on chip level at VGS = 10 V; ID = 60 A VDS = 20 V; ID = 1 m A VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 60 V; ID = 25 A VGS= 10 V; VDS = 30 V; ID = 25 A; RG = 10 Ω (diode) IF = 60 A; VGS= 0 V (diode) IF = 20 A; -di/dt = 100 A/µs; VDS = 30 V with heat transfer paste IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 1-3 .. GWM 120-0075P3 ponent Symbol IRMS TVJ Tstg VISOL FC Symbol IISOL ≤ 1 m A; 50/60 Hz; t = 1 min Mounting force with clip Conditions Conditions per pin in main current paths (L+, L-, L1, L2, L3) may be additionally limited by external connections Equivalent Circuits for Simulation Maximum Ratings 300 -40...+175 -55...+125 1000 50 - 250 A °C °C V~ N junction - case (typ.) Cth1 = 0.039 J/K; Rth1 = 0.28 K/W Cth2 = 0.069 J/K; Rth2 = 0.57 K/W Thermal Response Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 0.6 mΩ p F g Rpin to chip CP Weight coupling capacity between shorted pins and mounting tab in the case typ. 160 25 Dimensions in mm (1 mm = 0.0394") S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1 L3 L2 L1 L- L+ IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 2-3 .. GWM 120-0075P3 1.5 V 1.2 VDS 0.9 1.2 0.6 TVJ = 25°C 0.3 0.8 2.4 VGS = 6...