GWM160-0055X1 Description
.DataSheet.co.kr GWM 160-0055X1 Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW Straight leads Surface Mount Device G2 S2 MOSFETs Symbol.
GWM160-0055X1 Key Features
- MOSFETs in trench technology
- low RDSon
- optimized intrinsic reverse diode
- package
- high level of integration
- high current capability 300 A max
- aux. terminals for MOSFET control
- terminals for soldering or welding connections
- isolated DCB ceramic base plate with optimized heat transfer
- Space and weight savings Package options