GWM160-0055P3
GWM160-0055P3 is Three phase full bridge manufactured by IXYS.
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GWM 160-0055P3
Three phase full bridge with Trench MOSFETs in DCB isolated high current package
Preliminary data
L+ G3 G1 S3 S1 L1 L2 L3 G4 G2 S4 S2 LG6 S6 S5 G5
VDSS = 55 V = 160 A ID25 RDSon typ. = 2.3 mΩ
MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode) Conditions TVJ = 25°C to 150°C Maximum Ratings 55 ±20 160 120 135 90 V V A A A A
Applications AC drives
- in automobiles
- electric power steering
- starter generator
- in industrial vehicles
- propulsion drives
- fork lift drives
- in battery supplied equipment Features
- MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
- package:
- high level of integration
- high current capability
- auxiliary terminals for MOSFET control
- terminals for soldering or welding connections
- isolated DCB ceramic base plate with optimized heat transfer
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. TVJ = 25°C TVJ = 125°C 2 0.1 0.2 86 18 25 25 50 70 40 0.9 100 1.7 1.4 2.3 3.8 2.9 m Ω mΩ 4 1 V µA m A µA n C n C n C ns ns ns ns V ns 0.85 K/W K/W
RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF t rr Rth JC Rth JH on chip level at VGS = 10 V
VDS = 20 V; ID = 1 m A VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 44 V; ID = 25 A
VGS= 10 V; VDS = 30 V; ID = 25 A; RG = 10 Ω (diode) IF = 80 A; VGS= 0 V (diode) IF = 20 A; -di/dt = 100 A/µs; VDS = 30 V with heat transfer...
