GWM160-0055P3 Description
.. GWM 160-0055P3 Three phase full bridge with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G3 G1 S3 S1 L1 L2 L3 G4 G2 S4 S2 LG6 S6 S5 G5 VDSS = 55 V = 160 A ID25 RDSon typ. = 2.3 mΩ MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 TC.
GWM160-0055P3 Key Features
- MOSFETs in trench technology
- low RDSon
- optimized intrinsic reverse diode
- package
- high level of integration
- high current capability
- auxiliary terminals for MOSFET control
- terminals for soldering or welding connections
- isolated DCB ceramic base plate with optimized heat transfer
- 250 A °C °C V~ N