Datasheet4U Logo Datasheet4U.com

GWM160-0055P3 - Three phase full bridge

Key Features

  • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode.
  • package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. TVJ = 25°C TVJ = 125°C 2 0.1 0.2 86 18 25 25 50 70 40 0.9 100 1.7 1.4 2.3 3.8 2.9 m Ω m.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GWMTF6619E TFT MODULE Goworld Display

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
GWM160-0055X1 Three phase full Bridge
GWM100-0085X1 Three phase full Bridge
GWM100-01X1 Three phase full Bridge
GWM120-0075P3 Six-Pack MOSFET Modules
GWM120-0075X1 Three phase full Bridge

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com GWM 160-0055P3 Three phase full bridge with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G3 G1 S3 S1 L1 L2 L3 G4 G2 S4 S2 LG6 S6 S5 G5 VDSS = 55 V = 160 A ID25 RDSon typ. = 2.