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GWM120-0075P3 - Six-Pack MOSFET Modules

Key Features

  • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode.
  • package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. TVJ = 25°C TVJ = 125°C 2 0.1 0.2 91 19 28 36 56 130 50 0.9 90 1.1 1.4 3.7 6.4 4.5 m Ω m.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
GWM120-0075X1 Three phase full Bridge
GWM100-0085X1 Three phase full Bridge
GWM100-01X1 Three phase full Bridge
GWM160-0055P3 Three phase full bridge
GWM160-0055X1 Three phase full Bridge

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www.DataSheet4U.com GWM 120-0075P3 Three phase full bridge with Trench MOSFETs in DCB isolated high current package L+ G3 G1 S3 S1 L1 L2 L3 G4 G2 S4 S2 G6 S6 LS5 G5 VDSS = 75 V ID25 = 125 A RDSon typ. = 3.