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GWM100-0085X1 - Three phase full Bridge

Key Features

  • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode.
  • package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer.
  • Space and weight savings Package options.
  • 2 lead forms available - straight leads (SL) - SMD lead version (SMD) (TJ = 25°C, unless.

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www.DataSheet.co.kr GWM100-0085X1 Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 85 V = 103 A ID25 RDSon typ. = 5.