GWM160-0055P3 - Three phase full bridge

Datasheet Summary

Features

MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode.
package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. TVJ = 25°C TVJ = 125°C 2 0.1 0.2 86 18 25 25 50 70 40 0.9 100 1.7 1.4 2.3 3.8 2.9 m Ω m.

IXYS Corporation

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Datasheet Details

Part number	GWM160-0055P3
Manufacturer	IXYS Corporation
File Size	96.68 KB
Description	Three phase full bridge
Datasheet	GWM160-0055P3 Datasheet
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www.DataSheet4U.com GWM 160-0055P3 Three phase full bridge with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G3 G1 S3 S1 L1 L2 L3 G4 G2 S4 S2 LG6 S6 S5 G5 VDSS = 55 V = 160 A ID25 RDSon typ. = 2.

Published: Jan 24, 2007 |