GWM160-0055X1 - Three phase full Bridge

Datasheet Summary

Features

MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode.
package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer.
Space and weight savings Package options.
2 lead forms available - straight leads (SL) - SMD lead version (SMD) Characteristic Valu.

IXYS Corporation

📥 Download Datasheet

Datasheet Details

Part number	GWM160-0055X1
Manufacturer	IXYS Corporation
File Size	361.02 KB
Description	Three phase full Bridge
Datasheet	GWM160-0055X1 Datasheet
Additional preview pages of the GWM160-0055X1 datasheet.

📁 Similar Datasheet

GWMTF6619E - TFT MODULE (Goworld Display)

Other Datasheets by IXYS Corporation

GWM160-0055P3 - Three phase full bridge
GWM100-0085X1 - Three phase full Bridge
GWM100-01X1 - Three phase full Bridge
GWM120-0075P3 - Six-Pack MOSFET Modules
GWM120-0075X1 - Three phase full Bridge
GWM180-004X2 - Three phase full Bridge
GWM220-004P3 - Three phase full bridge
GWM70-01P2 - Three phase output MOSFET Modules

Full PDF Text Transcription

Click to expand full text

www.DataSheet.co.kr GWM 160-0055X1 Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 55 V = 150 A ID25 RDSon typ. = 2.

Published: Mar 14, 2012 |