GWM180-004X2
Key Features
- MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode
- package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer
- Space and weight savings Package options
- 2 lead forms available - straight leads (SL) - SMD lead version (SMD) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. 1.9 2.8 2.5 TJ = 25°C TJ = 125°C 50 0.2 110 33 30 150 240 350 170 0.12 0.51 0.003 1.3 1.0 1.6 max. 2.5 4.5 5 mW mW V µA µA µA nC nC nC ns ns ns ns mJ mJ mJ K/W K/W RDSon 1) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH 1) on chip level at VGS = 10 V ; ID = 100 A VDS = 20 V; ID = 1 mA VDS = VDSS; VGS = 0 V VGS = ± 20 V; VDS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V; VDS = 20 V; ID = 100 A inductive load VGS = +10/0 V; VDS = 24 V ID = 135 A; RG = 39 Ω; TJ = 125°C with heat transfer paste (IXYS test setup) VDS = ID
- (RDS(on) + RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. 20110307c © 2011 IXYS All rights reserved 1-6 D
