GWM180-004X2 - Three phase full Bridge

Features

MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode.
package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer.
Space and weight savings Package options.
2 lead forms available - straight leads (SL) - SMD lead version (SMD) Characteristic Valu.

IXYS Corporation

Datasheet Details

Part number	GWM180-004X2
Manufacturer	IXYS Corporation
File Size	348.92 KB
Description	Three phase full Bridge
Datasheet	GWM180-004X2 Datasheet
Additional preview pages of the GWM180-004X2 datasheet.

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Full PDF Text Transcription

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www.DataSheet.co.kr GWM 180-004X2 Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Preliminary data G1 S1 L+ G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 40 V = 180 A ID25 RDSon typ. = 1.

Published: Mar 14, 2012 |