* MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode
* package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized
GWM70-01P2 Datasheet (97.40 KB)
GWM70-01P2
IXYS Corporation
97.40 KB
Three phase output mosfet modules.
www.DataSheet4U.com Advanced Technical Information GWM 70-01P2 VDSS = 100 V ID25 = 70 A RDSon typ. = 11 mΩ Three phase full bridge with Trench MOSF.
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