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GWM70-01P2 - Three phase output MOSFET Modules

Features

  • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode.
  • package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. TVJ = 25°C TVJ = 125°C 2 0.1 0.2 110 18 44 35 85 150 70 0.8 80 1.7 1.25 11 24 14 m Ω mΩ.

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www.DataSheet4U.com Advanced Technical Information GWM 70-01P2 VDSS = 100 V ID25 = 70 A RDSon typ.
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