* l l l l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting force 300 260 30..120/7.52.7 10 Advantages l l l Plus 264TM package f
IXFB100N50P Datasheet (152.76 KB)
IXFB100N50P
IXYS Corporation
152.76 KB
Power mosfet.
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB 100N50P VDSS ID25 RDS(on) trr = 500 V = 100 A.
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