IXFB110N60P3 Datasheet | IXYS

Polar3TM Hi Per FETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 30 40 TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 110 275 55 3 -55 ... +150 150 -55 ... +150 V/ns C C C Maximum Lead Temperature for Soldering Plastic Body for 10s °C °C Mounting Force 30..120/6.7..27 N/lb...